Articles in peer review journals

Fiorenza, M. Vivona, F. Iucolano, A. Severino, S. Lorenti, G. Nicotra, C. Bongiorno, F. Giannazzo, F. Roccaforte, Temperature-dependent Fowler-Nordheim electron barrier height in SiO₂/4H-SiC MOS capacitors, Mater. Sci. Semicond. Proc. 78, (2018) 38-42

Roccaforte, M. Vivona, G. Greco, R. Lo Nigro, F. Giannazzo, S. Rascunà, M. Saggio, Metal/semiconductor contacts to Silicon Carbide: physics and technology, Proc. of the International Conference on Silicon Carbide and Related Materials (ICSCRM2017), Washington DC, USA, September 17-23, 2017, Mater. Sci. Forum 924, (2018) 339-344.

Fiorenza, M. Vivona, F. Iucolano, A. Severino, S. Lorenti, F. Roccaforte, Temperature-dependent gate current in SiO₂/4H-SiC MOS capacitors, Proc. of the International Conference on Silicon Carbide and Related Materials (ICSCRM2017), Washington DC, USA, September 17-23, 2017, Mater. Sci. Forum 924, (2018) 473-476.

Zimbone, N. Piluso, G. Litrico, R. Nipoti, R. Reitano, M.C. Canino, M.A. Di Stefano, S. Lorenti, F. La Via, Double step annealing for the recovering of ion implantation defectiveness in 4H-SiC DIMOSFET, Proc. of the International Conference on Silicon Carbide and Related Materials (ICSCRM2017), Washington DC, USA, September 17-23, 2017, Mater. Sci. Forum 924, (2018) 357-360.

Fiorenza, F. Iucolano, M. Saggio, F. Roccaforte, Oxide traps probed by transient capacitance measurements on lateral SiO₂/4H-SiC MOSFETs, Proc. of the International Conference on Silicon Carbide and Related Materials (ICSCRM2017), Washington DC, USA, September 17-23, 2017, Mater. Sci. Forum 924, (2018) 285-288.

Fiorenza, F. Iucolano, G. Nicotra, C. Bongiorno, I. Deretzis, A. La Magna, F. Giannazzo, M. Saggio, C. Spinella, F. Roccaforte, Electron trapping at SiO₂/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis, Nanotechnology 29, (2018) 395702.

Fiorenza, M. Vivona, S. Di Franco, S.Sanzaro, E. Smecca, A. Alberti, M. Saggio, F. Roccaforte, Properties of Al₂O₃ thin films deposited on 4H-SiC by reactive ion sputtering, Proc. of the EMRS-Fall Meeting 2018, Symposium R, Warsaw, Poland, 17-20 September 2018 – Mater. Sci. Semicond. Proc. 93, (2019) 290-294.

Rascunà, P. Badalà, C. Tringali, C. Bongiorno, E. Smecca, A. Alberti, S. Di Franco, F. Giannazzo, G. Greco, F. Roccaforte, M. Saggio, Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC, Proc. of the EMRS-Fall Meeting 2018, Symposium R, Warsaw, Poland, 17-20 September 2018- Mater. Sci. Semicond. Proc. (2019), 97, (2019) 62-66.

Fiorenza, F. Giannazzo, M.Saggio, F. Roccaforte, SiO2/SiC MOSFETs interface traps probed by nanoscale analyses and transient current and capacitance measurements, Proc. of European Conference of Silicon Carbide and Related Materials (ECSCRM2018), Birmingham, UK, 2-6 September 2018, Mater. Sci. Forum 963, (2019) 230-235.

Berger, J-F. Michaud, D. Chouteau, D. Alquier, Laser Annealing Simulations of Metallisations Deposited on 4H-SiC, Proc. of European Conference of Silicon Carbide and Related Materials (ECSCRM2018), Birmingham, UK, 2-6 September 2018, Mater. Sci. Forum 963, (2019), 502-505.

Calabretta, M. Zimbone, E.G. Barbagiovanni, S. Boninelli, N. Piluso, A. Severino, M.A. Di Stefano, S. Lorenti, L. Calcagno, F. La Via, Thermal annealing of high dose P implantation in 4H-SiC, Proc. of European Conference of Silicon Carbide and Related Materials (ECSCRM2018), Birmingham, UK, 2-6 September 2018, Mater. Sci. Forum 963, (2019) 399-402.

D.Cavallaro, M.Pulvirenti, E.Zanetti, M. Saggio, Capability of SiC MOSFETs under Short-Circuit tests and development of a Thermal Model by Finite Element Analysis, Proc. of European Conference of Silicon Carbide and Related Materials (ECSCRM2018), Birmingham, UK, 2-6 September 2018, Mater. Sci. Forum 963, (2019) 788-791.

Calabretta, M. Agati, M. Zimbone, S. Boninelli, A. Castiello, A. Pecora, G. Fortunato, L. Calcagno, L. Torrisi, F. La Via, Laser Annealing of P and Al Implanted 4H-SiC Epitaxial Layers, Materials 12, (2019) 3362.

Fiorenza, F. Giannazzo, F. Roccaforte, Characterization of SiO2/4H-SiC Interfaces in 4H-SiC: A Review, Energies 12, (2019) 2310.

Lo Nigro, E. Schilirò, P. Fiorenza, F. Roccaforte, Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices, J. Vac. Sci. Technol. A 38, (2020) 032410.

Publications in Conference Proceedings

Cacciato, F. Scrimizzi, A. Palermo, F. Gennaro, D. Nardo, Power devices comparison in synchronous half bridge topology, IEEE Proc. of the 20^th European Conference on Power Electronics and Applications (EPE’18 ECCE Europe), Riga (Latvia), 17-21 September 2018, P.1-P.10.

Roccaforte, G. Greco, P. Fiorenza, Processing issues in SiC and GaN power devices technology: the cases of 4H-SiC planar MOSFET and recessed hybrid GaN MISHEMT, IEEE Proc. of the 41^st International Semiconductor Conference (CAS2018), Sinaia (Romania), October 10-12, 2018, pp. 7-16.

Domingo Salvany, P. Decroux, C. Degoutte, L. Liggio, S. Frisella, “HVDC Intelligent Power Switchs for aircraft power distribution,” Proc. of MEA 2019 : More Electric Aircraft, Toulose (France), 6-7 February 2019.

Consentino, E. Guevara, L. Sanchez, F. Crupi, S. Reggiani, G. Meneghesso, “Threshold Voltage Instability in SiC Power MOSFETs”, Proc. of the PCIM European Conference 2019: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg (Germany) 7-9 May 2019.

Imbruglia, M. Saggio, S. Cascino, A. Minotti, M. Renna, G. Gullotta, A. Lionetto, J. Favre, F. Roccaforte, P. Fiorenza, L. Liggio, S. Frisella, WInSiC4AP: Wide band gap Innovative SiC for Advanced Power, IEEE Proc. International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE 2019), Torino, Italy, July 2-4, 2019, paper 2.1.

Nardo, A. Scuto, G. Sorrentino, A. Raciti, S.A. Rizzo, The key role of the SJ MOSFET with fast diode in high-end SMPS converters for telecom applications, IEEE Proc. International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE 2019), Torino, Italy, July 2-4, 2019, paper 2.1.

Abbatelli, A. Raciti, R. Scollo, G. Mauromicale, S.A. Rizzo, A. Scuto, D. Nardo, N. Salerno, G. Susinni, Effects of parasitic phenomena in half bridge with Super Junction MOSFETs suitable for UAV, IEEE Proc. International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE 2019), Torino, Italy, July 2-4, 2019, paper 2.1.

Mauromicale, A. Raciti, S.A. Rizzo, G. Susinni, L. Abbatelli, S. Buonomo, V. Giuffrida, A. Raffa, Improvement of SiC power module layout to mitigate the gate-source overvoltage during switching operation, IEEE Proc. International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE 2019), Torino, Italy, July 2-4, 2019, paper 2.1.

Cornigli, A. Tallarico, S. Reggiani, C. Fiegna, E. Sangiorgi, L. Sanchez, C. Valdivieso, G. Consentino, F. Crupi, Characterization and Modeling of BTI in SiC MOSFETs, Proc. ESSDERC2019, Krakow, Poland, 23-26 September 2019, pagg. 82-85.